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savantic semiconductor product specification silicon npn power transistors 2SC789 description with to-220c package low collector saturation voltage applications for medium power linear and switching applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 70 v v ceo collector-emitter voltage open base 70 v v ebo emitter-base voltage open collector 5 v i c collector current 4 a i b base current 1 a p c collector power dissipation t c =25? 30 w t j junction temperature 150 ? t stg storage temperature -55~150 ? downloaded from: http:///
savantic semiconductor product specification 2 silicon npn power transistors 2SC789 characteristics tj=25? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =25m a;i b =0 70 v v (br)ebo emitter-base breakdown voltage i e =1ma; i c =0 5 v v cesat collector-emitter saturation voltage i c =2 a;i b =0.2 a 1.0 v v besat base-emitter saturation voltage i c =2 a;i b =0.2 a 1.5 v i cbo collector cut-off current v cb =70v; i e =0 0.1 ma i ebo emitter cut-off current v eb =5v; i c =0 0.1 ma h fe dc current gain i c =0.5a ; v ce =5v 40 240 f t transition frequency i c =0.5a ; v ce =10v 3 mhz u h fe classifications o r y 40-80 70-140 120-240 downloaded from: http:///
savantic semiconductor product specification 3 silicon npn power transistors 2SC789 package outline fig.2 outline dimensions (unindicated tolerance:0. 10 mm) downloaded from: http:///

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